The Lindberg Furnaces are used in thermal processes for 2-inch silicon wafers. Tube 1 is used for N-type diffusion with solid sources, PhosPlus. Several ready-to-use TP250 sources are stored in Tube 1 at the temperature of 650 °C with constant nitrogen flow. Spacer wafers should be placed between the sources when not in use. The source discs are composed of Lanthanum Phosphate, Tantalum Oxide, Aluminum metaPhosphate and Aluminum Oxide. The maximum process temperature is 1100 °C.

The Lindberg Furnaces are used in thermal processes for 2-inch silicon wafers. Tube 2 is used for dry and wet oxidation and drive-in of diffusion processes. The oxide growth process is used for field oxide and gate oxide. The wet oxidation is enabled by an D.I. water bubbler. Them maximum process temperature is 1100 °C.

The Lindberg Furnaces are used in thermal processes for 2-inch silicon wafers. Tube 3 is used for P-type diffusion with solid sources, BoronPlus. Several ready-to-use GS126 sources are stored in Tube 3 at the temperature of 650 °C with constant nitrogen flow. Spacer wafers should be placed between the sources when not in use. The source discs are composed of Barium Oxide, Silicon Dioxide, Boron Oxide, Aluminum Oxide and Magnesium Oxide. The maximum process temperature is 1100 °C.

The Lindberg Furnaces are used in thermal processes for 2-inch silicon wafers. Tube 4 is used for metal annealing processes with nitrogen flow. The maximum process temperature is 600 °C.