Metal
Cu Etching
Etch Rates of Copper (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Al Etching
Etch Rates of Aluminum (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Cr Etching
Etch Rates of Chromium (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Au Etching
Etch Rates of Gold (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Titanium Etching
Etch Rates of Titanium (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Dielectric
Silicon Dioxide Etching
Etch Rates of Silicon Dioxide (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Silicon Nitride Etching
Etch Rates of Silicon Nitride (nm/min)
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Polymer
General Polymer Etching Reference
Etch Rate for Resists, Parylene, Polyimdes (nm/min)
| | S1800 Positive Reist | Furrex Negative Reist | Parylene C | Polyimde |
| Piranha | >92,000 | >59,000 | 2.6 | >17,000 |
| MicroStripper | >94,000 | >60,000 | N/A | 520 |
| Acetone | >176,000 | >87,000 | 0.77 | 0 |
*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003
Semiconductor
Silicon KOH Etching
50% KOH Etching of Silicon 100a
50% KOH Etching of Silicon 110a
a: Cited from www.cheanroom.byu.edu
Silicon HNA Etching
HNA Solution (suggested ratio):
Acetic Acid: 160 ml
Nitric Acid: 60 ml
Hydrofluoric Acid: 20 ml
Temperature:
Room Temperature
Etch Rate:
1 - 3 um/minute