Oxford PECVD Left - Carbide
 | | | Equipment | | | Equipment | Oxford PECVD Left |
| Manufacturer: | Oxford Instruments |
| Model | Plasmalab 80 Plus |
| Platen Size | 8 in |
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| | | Recipe |
| Recipe Name: | Standard SiC |
| Gas | Silane: 13 sccm |
| Methane: 100 sccm |
| Nitrogen: 185 sccm |
| Pressure | 1000 mtorr |
| Temperature | 250°C |
| Platen Power | 50 W |
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| | | Resultsa |
| Deposition Rate: | 362.46 Å/minb |
| Uniformity: | 81.55%c |
| Refractive Index at 633nm: | 1.85d |
| Stress Level: | -308.67 MPascale |
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| a: All data is updated as the date indicated above b: An average value from 20 min deposition c: Film thickness variation across a 4” wafer, defined as (max-min)/average d: An average value across a 4” wafer e: Measured with optical stress measurement tool |
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