Oxford PECVD Right - Oxide
 | | | Equipment | | | Equipment | Oxford PECVD Right |
| Manufacturer: | Oxford Instruments |
| Model | Plasmalab 80 Plus |
| Platen Size | 6 in |
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| | | Recipe |
| Recipe Name: | Standard SiO2 |
| Gas | Silane: 8.5 sccm |
| Nitrous Oxide: 710 sccm |
| Nitrogen: 162 sccm |
| Pressure | 1000 mtorr |
| Temperature | 300°C |
| Power | 20 W |
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| | | Resultsa |
| Deposition Rate: | 598.97 Å/minb |
| Uniformity: | 1.23%c |
| Refractive Index at 633nm: | 1.4761d |
| Stress Level: | -98.83 MPascale |
| Etch Rate (100:1 BOE) | 159.7 Å/minf |
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| a: All data is updated as the date indicated above b: An average value from 20 min deposition c: Film thickness variation across a 4” wafer, defined as (max-min)/average d: An average value across a 4” wafer e: Measured with optical stress measurement tool f: An average value from 20 min etch |
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