Metal Deposition

Sputtering

PVD RF Sputterer - Al

Recipea
	Recipe Name	Al
	Pressure	5.0 mTorr
	Argon	30 sccm
	Step 1
	Ramp to	150 W
	Ramp Rate	120 W/min
	Hold for	5 min
	Step 2
	Ramp to 0 watts	60 W/min
	Hold for	5 min

a: The parameters were tested by IEN cleanroom staff

Unifilm Sputterer - Cu

Equipment
	Equipment	Unifilm Sputterer
	Manufacturer:	Unifilm Inc
	Substrate Size	up to 4 in

	Recipe
	Recipe Name:	Cu-DC1-4-A
	Mode	S4-3-A
	Gas	Ar: 90 sccm
	Pressure	5 x 10-3 mtorr
	Deposition Rate	79 - 3200 A/min

	Resultsa
	Uniformity:	2%b


a: All data is measured by IEN cleanroom staff b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Au

Equipment
	Equipment	Unifilm Sputterer
	Manufacturer:	Unifilm Inc
	Substrate Size	up to 4 in

	Recipe
	Recipe Name:	Au-DC1-3-A
	Mode	S4-3-A
	Gas	Ar: 90 sccm
	Pressure	5 x 10-3 mtorr
	Deposition Rate	up to 248 A/min

	Resultsa
	Uniformity:	2%b


a: All data is measured by IEN cleanroom staff b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Ti

Equipment
	Equipment	Unifilm Sputterer
	Manufacturer:	Unifilm Inc
	Substrate Size	up to 4 in

	Recipe
	Recipe Name:	Ti-DC1-5-A
	Mode	S4-3-A
	Gas	Ar: 90 sccm
	Pressure	5 x 10-3 mtorr
	Deposition Rate	129 - 1292 A/min

	Resultsa
	Uniformity:	2%b


a: All data is measured by IEN cleanroom staff b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Cr

Equipment
	Equipment	Unifilm Sputterer
	Manufacturer:	Unifilm Inc
	Substrate Size	up to 4 in

	Recipe
	Recipe Name:	Cr-DC1-4-A
	Mode	S4-3-A
	Gas	Ar: 90 sccm
	Pressure	5 x 10-3 mtorr
	Deposition Rate	100 - 1500 A/min

	Resultsa
	Uniformity:	2%b


a: All data is measured by IEN cleanroom staff b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Al

Equipment
	Equipment	Unifilm Sputterer
	Manufacturer:	Unifilm Inc
	Substrate Size	up to 4 in

	Recipe
	Recipe Name:	Al-DC1-4-B
	Mode	S4-3-A
	Gas	Ar: 90 sccm
	Pressure	5 x 10-3 mtorr
	Deposition Rate	60 - 1000 A/min

	Resultsa
	Uniformity:	2%b


a: All data is measured by IEN cleanroom staff b: Film thickness variation across a 4” wafer, defined as (max-min)/average

ALD

Cambridge NanoTech Plasma ALD - Pt

	Equipment
	Equipment	Cambridge NanoTech Plasma ALD - Metal
	Substrate Size	up to 6" wafer

	Recipea
	Recipe Name	Plasma_Pt_95C_or_Higher
		Wait 600 sec
		Argon Carrier: 60 sccm
		Argon Plasma: 200 sccm
		Wait 1 sec
		Pulse (): 1 sec
		O2 Plasma: 20 sccm
		Wait 10 sec
		RF Power: 300 W
		Wait 5 sec
		H2 Plasma: 20 sccm
		Wait 10 sec
		H2 Plasma: 0 sccm
		Wait 10 sec
		Argon Carrier: 20 sccm
		Argon Plasma: 40 sccm
		Platen Temp: 95 C or higher

a: The parameters were tested by IEN cleanroom staff

Cambridge NanoTech Plasma ALD - ZnO

	Equipment
	Equipment	Cambridge NanoTech Plasma ALD - Metal
	Substrate Size	up to 6" wafer

	Recipea
	Recipe Name	Plasma_Pt_95C_or_Higher
	Wait Time	600 sec
	Ar Carrier	60 sccm
	Ar Plasma	200 sccm
	Wait Time	1 sec
	Pulse	1 sec
	O2 Plasma	20 sccm
	Wait Time	10 sec
	RF Power	300 W
	Wait Time	5 sec
	H2 Plasma	20 sccm
	Wait Time	10 sec
	H2 Plasma	0 sccm
	Wait Time	10 sec
	Ar Carrier	20 sccm
	Ar Plasma	40 sccm
	Platen Temp	95 C or higher

a: The parameters were tested by IEN cleanroom staff

Evaporation

Denton Explorer - Fe

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Fe
	Crucible	4
	Scan Pattern	2
	XTC File	003


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Pt

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Pt
	Crucible	6
	Scan Pattern	5
	XTC File	011


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Au

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Au
	Crucible	6
	Scan Pattern	1
	XTC File	001


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Ti

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Ti
	Crucible	1
	Scan Pattern	1
	XTC File	001


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Cu

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Cu
	Crucible	6
	Scan Pattern	5
	XTC File	006


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Cr

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Cr
	Crucible	2
	Scan Pattern	1
	XTC File	004


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Al

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Al
	Crucible	5
	Scan Pattern	5
	XTC File	002


a: The parameters were tested by IEN cleanroom staff

Denton Explorer - Ni

	Equipment
	Equipment	Denton Explorer
	Substrate Size	up to 4" wafer

	Recipea
	Recipe Name	Ni
	Crucible	3
	Scan Pattern	2
	XTC File	005


a: The parameters were tested by IEN cleanroom staff

Electroplating

Copper Plating

	Equipment
	Equipment	Plating Station
	Substrate Size	up to 6" wafer

	Plating Parametersa
	Plating Solution	Transene Copper Plating Acid Type
	Anode	Copper Board
	Anode to Cathode Ratio	1:1
	Temperature	21 - 49 oC
	pH	2.5 - 3.5
	Stirring Rate	500 rpm
	Current Density	0.21 - 0.54 mA/cm2
	Pulse	Optional

a: The parameters are provide by Transene

Nickel Plating

	Equipment
	Equipment	Plating Station
	Substrate Size	up to 6" wafer

	Plating Parametersa
	Plating Solution	Sulfamate Nickel Plating SN-10
	Anode	Sulfur Depolarized Nickel
	Anode to Cathode Ratio	1:1
	Temperature	32 - 60 oC
	pH	4.2 - 4.8
	Stirring Rate	500 rpm
	Current Density	0.05 - 2.1 mA/cm2
	Pulse	Optional

a: The parameters are provide by Transene

Gold Plating

	Equipment
	Equipment	Plating Station
	Substrate Size	up to 6" wafer

	Plating Parametersa
	Plating Solution	Transene Sulfite Gold TSG-250
	Anode	Platinized
	Anode to Cathode Ratio	1:1
	Temperature	43 - 71 oC
	pH	6.0 - 7.0
	Stirring Rate	500 rpm
	Current Density	0.01 - 0.08 mA/cm2
	Pulse	Optional

a: The parameters are provide by Transene

Solder Plating

	Equipment
	Equipment	Plating Station
	Substrate Size	up to 6" wafer

	Plating Parametersa
	Plating Solution	Techni Solder Matte NF820 60/40
	Anode	Sn/Pb Anode
	Anode to Cathode Ratio	1:1
	Temperature	20 oC
	Stirring Rate	500 rpm
	Current Density	30 mA/cm2
	Pulse	Optional

a: The parameters are provide by Transene

Electroless Plating

Electroless Nickel

	Equipment
	Equipment	Plating Station
	Substrate Size	up to 6" wafer

	Plating Parametersa
	Plating Solution	Transene Nickelex
	pH	5
	Temperature	90 - 98 oC
	Substrate	Si, Ge, GaAs, Ni, CdS, Kovar
	Deposition Rate	200 nm/min at 95 oC on silicon



a: The parameters are provide by Transene

Electroless Gold

	Equipment
	Equipment	Plating Station
	Substrate Size	up to 6" wafer

	Plating Parametersa
	Plating Solution	Immersion Gold CF
	Mix Ratio	3535 ml Part A, 250 ml Part B
	pH	8.6 - 9.0
	Temperature	70 - 75 oC
	Substrate	Si, Ge, GaAs, Ni, CdS, Kovar
	Deposition Rate	25 nm/min on Ni 40 nm/min on Cu
	Plating Thickness	0.5 um Maximum
	Agitation	Continuous Required

a: The parameters are provide by Transene