IEN - Micro/Nano Fabrication Facility
Processing (Older)
Oxford ICP PECVD - Oxide
 Equipment
          EquipmentOxford ICP-PECVD

Manufacturer:Oxford Instruments

ModelPlasmalab 80 Plus

Platen Size4 in



 Recipe

Recipe Name:Standard Oxide 100C

Gas  Silane: 6 sccm

Nitrous Oxide: 20 sccm

Pressure8 mtorr

Temperature100°C

Platen Power1 W

Coil Power500 W



 Resultsa

Deposition Rate:244.52 Å/minb

Uniformity:5.73%c

Refractive Index at 633nm:1.392d

Stress Level: 




a: All data is updated as the date indicated above

b: An average value from 20 min deposition

c: Film thickness variation across a 4” wafer, defined as (max-min)/average

d: An average value across a 4” wafer

e: Measured with optical stress measurement tool