Tystar Poly 4 - PolySilicon
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| Equipment | | | Equipment | Tystar Poly Furnace 4 |
| Manufacturer: | Tystar Inc. |
| Model | Poly |
| Tube Size | up to 6 in |
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| Recipe |
| Recipe Name: | Low Stress PolySilicon |
| Gas | SiH4 |
| Gas Flow Rate | 100 - 150 sccm |
| Pressure | 250 – 350 mTorr |
| Temperature | 580 – 620 ◦C |
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| Resultsa |
| Deposition Rate | 6 - 9 nm/min |
| Index of Refraction | 3.5 – 5.5 |
| Uniformity: | < 3%b |
| Residual Stress | 50 – 100 Mpac |
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| a: Date provided by Tystar Inc. b: Calculated using 1σ std. Deviation c: Gas Ratio Dependant |
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