IEN - Micro/Nano Fabrication Facility
Processing
Copper Plating
 Equipment
           EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Transene Copper  Plating Acid Type

Anode Copper Board

Anode to Cathode Ratio 1:1

Temperature 21 - 49 oC

pH 2.5 - 3.5

Stirring Rate 500 rpm

Current Density 0.21 - 0.54 mA/cm2

Pulse Optional

a: The parameters are provide by Transene