 | | | Equipment | | | Equipment | Plating Station |
| Substrate Size | up to 6" wafer |
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| | | Plating Parametersa |
| Plating Solution | Transene Nickelex |
| pH | 5 |
| Temperature | 90 - 98 oC |
| Substrate | Si, Ge, GaAs, Ni, CdS, Kovar |
| Deposition Rate | 200 nm/min at 95 oC on silicon |
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| a: The parameters are provide by Transene |
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