Etching Tools Semiconductor Recipes -

Gallium Arsenide Plasma-Therm RIE - Feature Etch
Temperature:	25-40 °C
Gases:	Cl2 - 20 sccm BCl3 - 30 sccm
Pressure:	15 mTorr
Power:	150 W
DC-bias:	250 V
Etch Rate:	2000 Å/min

Gallium Arsenide Plasma-Therm RIE - Feature Etch

Temperature:

25-40 °C

Gases:

Cl2 - 20 sccm
BCl3 - 30 sccm

Pressure:

15 mTorr

Power:

150 W

DC-bias:

250 V

Etch Rate:

2000 Å/min

Gallium Arsenide Plasma-Therm RIE - Via Hole Etch
Temperature:	25-40 °C
Gases:	Cl2 - 10 sccm BCl3 - 40 sccm
Pressure:	20 mTorr
Power:	75 W
DC-bias:	150 V
Etch Rate:	8000 - 10000 Å/min

Gallium Arsenide Plasma-Therm RIE - Via Hole Etch

Temperature:

25-40 °C

Gases:

Cl2 - 10 sccm
BCl3 - 40 sccm

Pressure:

20 mTorr

Power:

75 W

DC-bias:

150 V

Etch Rate:

8000 - 10000 Å/min

Si Plasma Therm RIE Trench Etch - Fluorine
Temperature:	25 °C
Gases:	SF6 - 25 sccm O2 - 25 sccm
Pressure:	100 mTorr
Power:	180 W
DC-bias:	150 V
Etch Rate:	5000-7500 Å/min

Si Plasma Therm RIE Trench Etch - Fluorine

Temperature:

25 °C

Gases:

SF6 - 25 sccm
O2 - 25 sccm

Pressure:

100 mTorr

Power:

180 W

DC-bias:

150 V

Etch Rate:

5000-7500 Å/min

Si Plasma Therm RIE Trench Etch - Chlorine
Temperature:	40 °C
Gases:	SiCl4 - 30 sccm Cl2 - 20 sccm
Pressure:	30 mTorr
Power:	150 W
DC-bias:	200 V
Etch Rate:	1000 Å/min

Si Plasma Therm RIE Trench Etch - Chlorine

Temperature:

40 °C

Gases:

SiCl4 - 30 sccm
Cl2 - 20 sccm

Pressure:

30 mTorr

Power:

150 W

DC-bias:

200 V

Etch Rate:

1000 Å/min

Si STS ICP Module 1: 2µm wide, 60µm depth bulk Si etch
	Etch Cycle	Dep Cycle
Gases:	SF6 - 130 sccm O2 - 13 sccm C4F8 - 20 sccm (ramped @ -4 sccm/min) (11+0s)	C4F8 - 85 sccm (8+0s)
Pressure:	24 - 22 mT (75% Fixed APC)	10 - 12 mT (75% Fixed APC)
Coil Power:	800 W	600 W
Platen Power:	12W, HF	--
Process Time:	43:23 (min:s)
Temperature:	Lid - 45°C Platen - 20°C
He Back-cooling:	10 T

Si STS ICP Module 1: 2µm wide, 60µm depth bulk Si etch

Etch Cycle

Dep Cycle

Gases:

SF6 - 130 sccm
O2 - 13 sccm
C4F8 - 20 sccm (ramped @ -4 sccm/min)
(11+0s)

C4F8 - 85 sccm
(8+0s)

Pressure:

24 - 22 mT
(75% Fixed APC)

10 - 12 mT
(75% Fixed APC)

Coil Power:

800 W

600 W

Platen Power:

12W, HF

Process Time:

43:23 (min:s)

Temperature:

Lid - 45°C
Platen - 20°C

He Back-cooling:

10 T

STS ICP Module 1 Results
Etch Depth:	60µm
Etch Rate:	1.55µm/min
Profile Angle:	89.9°
Selectivity (Si:PR):	53:1
Uniformity across wafer:	±1.0%
Initial Mask Undercut:	364nm/edge
Sidewall roughness:	150nm
Uniformity btw wafers:	±1.0%

STS ICP Module 1 Results

Etch Depth:

60µm

Etch Rate:

1.55µm/min

Profile Angle:

89.9°

Selectivity (Si:PR):

53:1

Uniformity across wafer:

±1.0%

Initial Mask Undercut:

364nm/edge

Sidewall roughness:

150nm

Uniformity btw wafers:

±1.0%

Si STS ICP Module 2: 1µm wide, 10µm depth SOI etch
	Etch Cycle	Dep Cycle
Gases:	SF6 - 130 sccm O2 - 13 sccm 7+0s)	C4F8 - 100 sccm (5+0s)
Pressure:	20 mT (Auto APC)	20 mT (Auto APC)
Coil Power:	600 W	600 W
Platen Power:	14W, LF (5ms on)	--
Process Time:	6:30 (min:s) with 10% over-etch
Temperature:	Lid - 45°C Platen - 20°C
He Back-cooling:	10 T

Si STS ICP Module 2: 1µm wide, 10µm depth SOI etch

Etch Cycle

Dep Cycle

Gases:

SF6 - 130 sccm
O2 - 13 sccm
7+0s)

C4F8 - 100 sccm
(5+0s)

Pressure:

20 mT
(Auto APC)

Coil Power:

600 W

Platen Power:

14W, LF (5ms on)

Process Time:

6:30 (min:s) with 10% over-etch

Temperature:

Lid - 45°C
Platen - 20°C

He Back-cooling:

10 T

STS ICP Module 2 Results
Etch Depth:	10µm
Etch Rate:	1.91µm/min
Profile Angle:	89.4°
Selectivity (Si:PR):	53:1
Uniformity across wafer:	±1.0%
Initial Mask Undercut:	163nm/edge
Sidewall roughness:	123nm
Notch width at oxide interface:	148nm/edge
Uniformity btw wafers:	±1.0%

STS ICP Module 2 Results

Etch Depth:

10µm

Etch Rate:

1.91µm/min

Profile Angle:

89.4°

Selectivity (Si:PR):

53:1

Uniformity across wafer:

±1.0%

Initial Mask Undercut:

163nm/edge

Sidewall roughness:

123nm

Notch width at oxide interface:

148nm/edge

Uniformity btw wafers:

±1.0%

Si STS ICP Module 3: 5µm wide, 10µm depth SOI etch
	Etch Cycle	Dep Cycle
Gases:	SF6 - 130 sccm O2 - 13 sccm (7.5+0s)	C4F8 - 100 sccm (5+0s)
Pressure:	25 mT (Auto APC)	25 mT (Auto APC)
Coil Power:	600 W	600 W
Platen Power:	16W, LF (5ms on)	--
Process Time:	8:45 (min:s)
Temperature:	Lid - 45°C Platen - 20°C
He Back-cooling:	10 T

Si STS ICP Module 3: 5µm wide, 10µm depth SOI etch

Etch Cycle

Dep Cycle

Gases:

SF6 - 130 sccm
O2 - 13 sccm
(7.5+0s)

C4F8 - 100 sccm
(5+0s)

Pressure:

25 mT
(Auto APC)

Coil Power:

600 W

Platen Power:

16W, LF (5ms on)

Process Time:

8:45 (min:s)

Temperature:

Lid - 45°C
Platen - 20°C

He Back-cooling:

10 T

STS ICP Module 3 Results
Etch Depth:	10µm
Etch Rate:	1.67µm/min
Profile Angle:	90.1°
Selectivity (Si:PR):	39:1
Uniformity across wafer:	±1.2%
Initial Mask Undercut:	147nm/edge
Sidewall roughness:	188nm
Notch width at oxide interface:	143nm/edge
Uniformity btw wafers:	±2.7%

STS ICP Module 3 Results

Etch Depth:

10µm

Etch Rate:

1.67µm/min

Profile Angle:

90.1°

Selectivity (Si:PR):

39:1

Uniformity across wafer:

±1.2%

Initial Mask Undercut:

147nm/edge

Sidewall roughness:

188nm

Notch width at oxide interface:

143nm/edge

Uniformity btw wafers:

±2.7%

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Gallium Arsenide/Aluminum Gallium Arsenide

Gallium Arsenide Plasma-Therm RIE - Feature Etch

Gallium Arsenide Plasma-Therm RIE - Via Hole Etch

Silicon

Si Plasma Therm RIE Trench Etch - Fluorine

Si Plasma Therm RIE Trench Etch - Chlorine

Si STS ICP Module 1: 2µm wide, 60µm depth bulk Si etch

Si STS ICP Module 2: 1µm wide, 10µm depth SOI etch

Si STS ICP Module 3: 5µm wide, 10µm depth SOI etch