Recipe Library

Lithography:

S1813: MA-6(405nm); MA-6(365nm); MLA150(405nm; MLA150(375nm)

SC1827: MA-6(405nm); MA-6(365nm); MLA150(405nm; MLA150(375nm)

SPR-220.70: MA-6(405nm); MA-6(365nm); MLA150(405nm; MLA150(375nm)

NR9-1500py: MA-6(405nm); MA-6(365nm); MLA150(405nm; MLA150(375nm)

NR71-3000p: MA-6(405nm); MA-6(365nm); MLA150(405nm; MLA150(375nm)

SiO2 deposition/growth:

PECVD: Unaxis PECVD; STS3 PECVD; Oxford ICP-PECVD

ALD: Cambridge oxide chamber; Cambridge metal chamber

TEOS: Tystar Mini 3

Furnace: Tystar Nitride 3; Tystar Mini 1; Tystar Mini 2

SiN deposition

Si deposition/growth

Contact Information

Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu