Login
Select Login Portal
IEN - Micro/Nano Fabrication Facility
Become a User
Services
Capabilities
Safety
Processing
Rates
Contact
SUMS Home
Search
Login
Select Login Portal
Processing
Equipment Baseline
Process Support Team
Baseline Spreadsheets
Basic Cleanroom Guides
New Processing Page - Draft
Processing Guide - old
Processing Recipes
Annealing / Sintering
Dielectric PECVD Deposition (non-thermal)
Doping
Etching Tools Dielectric Recipes
Etching Tools Metal Recipes
Etching Tools Polymer Recipes
Etching Tools Semiconductor Recipes
Thermal Film Growth
Processing Fundamentals
Processing Information
Recipe Library
Etching Tools Metal Recipes
Al Plasma Therm RIE
Cr Plasma Therm ICP
Cr Plasma Therm RIE
Aluminum
Aluminum Etch Plasma-Therm RIE
Temperature:
25 °C
Gases:
BCl
3
- 40 sccm
Cl
2
- 10 sccm
Pressure:
30 mTorr
Power:
125 W
DC-bias:
250 V
Etch Rate:
500-2000 Å/min
Chrome
Chrome Etch Plasma-Therm ICP
Temperature:
25 °C
Gases:
Step 1
Step 2
O
2
10 sccm
6 sccm
Cl
2
20 sccm
24 sccm
Pressure:
10 mTorr
10 mTorr
Power RF:
25 W
10 W
Power ICP:
600 W
500 W
Time:
20 sec
Endpoint
Chrome Etch Plasma-Therm RIE
Temperature:
25 °C
Gases:
Cl
2
- 40 sccm
O
2
- 10 sccm
Pressure:
75 mTorr
Power:
55 W
DC-bias:
50 V
Etch Rate:
100-200 Å/min
Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu
Loading