IEN - Micro/Nano Fabrication Facility
Thin Film Table
    Tm °C   Density (g/cm3)   Z-ratio   T °C @ VP(Torr)           Method   Crucible   Boat   Remarks
Al   660   2.700   1.080   677   821   1010   eBeam (xlnt), Thermal   TB, BN, ZB   BN,TB
CG,W
  Alloys and wets. Fill Boat 2/3.
Al2O3   2045   3.970   0.336   --   --   1550   eBeam (xlnt), sputter   --   W   n~2.7. Films hard and smooth.
B   2100   2.370   0.389   1278   1548   1797   eBeam (xlnt), sputter   G   G   Material explodes with rapid cooling.
C   Sublimes   3.520   0.220   1657   1867   2137   eBeam (xlnt), sputter   --   --
Cr   1890   7.200   0.305   837   977   1157   eBeam (good), Thermal   G   CG, Cr rod   Adheres well. High rates possible. Sublimes.
Cu   1083   8.930   0.437   727   857   1017   eBeam (xlnt),Thermal    Ta,Mo,Al 2O 3   Mo   Does not adhere well. Any source material.
Er   1497   9.050   0.740   650   775   930   eBeam (good), Thermal   --   W, Ta   --
Ge   937   5.350   0.516   812   957   1167   eBeam (xlnt)   Al2O 3,
Quartz
  W, G, Ta   n = 4.01
Au   1062   19.300   0.381   807   947   1132   eBeam (xlnt), Thermal   CG,
BN,
Al 2O 3
  W, Mo, Al 2O 3   May not adhere well. Films soft.
In   157   7.300   0.841   487   597   742   eBeam (good)   G, Al 2O3,
Mo liner
  W, Mo   Wets W and Cu. use Mo liner in gun.
In 2O 3-SnO 2   1800   6.43-7.14   --   --   --   --   eBeam (good)   G   W, Mo   Sublimes. 90 In 20 3:10 Sn0 2 wt%.
anneal req. for transparancy and improved conductivity.
Fe   1535   7.860   0.349   858   998   1180   eBeam (xlnt)   BeO, Al 2O 3   W   Attacks Tungsten. Use gentle preheat to outgas. Films hard, smooth.
Pb   328   11.300   1.130   342   427   497   eBeam (xlnt), Thermal   Quartz, Al 2O 3   W, Mo   Toxic.
Ni/Cr   1395   8.50   0.3258   847   987   1217   e-Beam (xlnt.)   Al 2O 3, VC, BeO   --   --
Ni   1453   8.910   0.331   927   1072   1262   eBeam (xlnt), Thermal   Al 2O 3,
BeO,
CG
  W   Alloys with refractory metals. Forms smooth adherent films.
Mo    2610   10.22   0.257   1592   1822   2117   Thermal (xlnt)   --   --   Films hard smooth.Careful degas required.
Pt   1769   21.45   0.245   1292   1492   1747   eBeam (xlnt), Thermal   CG, ThO 2   W   Alloys with metals; poor adhesion; films soft
Si   1410   2.42   0.712   992   1147   1337   eBeam (fair), sputter   BeO, Ta, CG   W, Ta   Alloys with W;
SiO produced above 4x10 -6; n = 1.6
SiO 2   1610-1710   2.2-2.7   1.000   --   --   ~1025   eBeam (xlnt), sputter   Al 2O 3   --   n = 1.47
Si 3N 4   Sublimes   3.44   --   --   --   ~800   eBeam, sputter   --   --   n ˜ 2.1
Ag   961   10.49   0.529   847   958   1105   eBeam (xlnt),
Thermal (Mo boat)
  Al 2O 3,
Mo
  Mo,
Ta
   
Sn   232   7.75   0.724   682   807   997   eBeam (xlnt), Thermal   Al   Mo    Wets Mo
Ti   1675   4.50   0.628   1067   1235   1453   eBeam (xlnt), Thermal   TiC   W   Alloys with refractory metals.
W   3410     19.30   0.163   2117   2407   2757   eBeam (good), Thermal   --   --   Forms violate oxides. Films hard & adherent.
Zn   419   7.14   0.514   127   177   250   eBeam (xlnt), Thermal   Al 2O 3   Mo, W, Ta    

 

G = Graphite Crucible;
CG = Coated Graphite Crucible;
Al2O3 = Alumina Crucible;
BN = Boron Nitride Crucible;
Mo = Molybdenum Crucible;
Ta = Tantalum Crucible;
TB = TiB2;
ZB = ZrB2;
W = Tungsten;
VC = vitreous carbon;

VP= Vapor Pressure

 

Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu