IEN - Micro/Nano Fabrication Facility
Photo-resist Information

Please refer to the technical data sheets in the related links. 

Name

 

Description

 

Category

 

Wavelength

 

Developer

 

Stripper

SC 1813

 
  • Typical thickness is 1-4 um
  Positive   g-line   MF-319,351   1165A
                     

SC 1827

 
  • Typical thickness is 1.5-7 um
  Positive   g-line   MF-319, 351   1165A
                     

SPR 220.7.0

 
  • Excellent adhesion and plating characteristics
  • Ideal for MEMs and bump processes
  • Broadband, g-line and i-line capable
  • >10 um film thickness in a single coat with good uniformity (Typically 6-35 um thickness)
  • Au, Cu, Ni/Fe plating without cracking
  • Recommended to use HMDS for adhesion to some substrates
  Positive   i-line   MF-319, 351   1165 A
                     

NR71-3000p

 
  • Straight resist sidewall profile
  • Fast develop time
  • Superior resolution capability
  • Typically for 2-13 um thicknesses
  • Temperature resistance of up to 180C
  • Superior selectivity in RIE process
  • Does not require HMDS 
  Negative   i-line   RD6   RR41
                     

RR9-1500PY

 
  • Single layer lift off process to pattern metals and dielectrics without RIE
  • Sensitivity to wavelengths shorter than 380 nm
  • Typically 1.25-3 um thickness
  • Superior resolution capability
  • Fast develop time
  • Temperature resistance of up to 100C
  Negative   i-line   RD6   RR41
                     

 

Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu