The Georgia Tech Plasma Therm ICP is equipped with two chambers -- one is dedicated to deep anisotropic. The Plasma Therm ICP (inductively coupled plasma) etcher (DRIE) can be used to etch a variety of materials.

• SILICON (BOSCH process)
• SILICON DIOXIDE
• POLYMER 
• III/V Etching
• Metal Mask Allowed (Dielectric and III/V Chamber)

Photo Resist Mask Only

Dual Chamber Etching System Featuring

• Right: Si trench etch / poly-Si / through-wafer
• Left: III-V etching; SiO2 Si3N4 & Al / metal etching

Materials etched and acceptable masks

• Etched/Left: SiO2 , Si3N4 , Al, III-V -> InP, InGaAs
• Mask/Left: Metal, Photoresist
• Etched/Right: Silicon, poly-Si
• Mask/Right: no metal masks (only PR, Si3N4 , SiO2 )

Component Specifications (both)

• Coil: 2000W 2.8MHz RFPP RF-20M
• Platen: 500W 13.56MHz RFPP RF-5S
• HBC
• Left: Ceramic Clamp
• Right: ESC

Gases

• Left: Cl2 , BCl3 , C4F8 , CF4 , H2 , Ar, O2
• Right: SF6, O2, C4F8, Ar

Process Pressure (both)

• 5-80mTorr

Substrate

• Small pieces - one 100mm wafer, up to 150mm in right chamber

Temperatures

• Platen:
• Left 20°C
• Right 20°C
• Chamber
• 40°C

Recent Service/Modification

• Right chamber HBC leak repaired
• Full platen PM for both chambers (seals, lift, cleaning)