Plasma Therm PECVD - Standard Oxide Recipe
| Equipment |
| Equipment | Plasma Therm PECVD |
| Manufacture | Plasma-Therm, Inc |
| Model | Wafer/Batch 790 Series |
| Platen size | 8 in |
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| Recipe |
| Recipe Name | STDOX |
| Gas | 2% SiH4/N2 400 sccm |
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| N2O 900 sccm |
| Platen Power | 25 W |
| RF Frequency | 13.56 Mhz |
| Chamber Pressure | 900 mTorr |
| Platen Temperature | 250 ºC |
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Results a |
| Deposition Rate | 480.15 A/min b |
| Uniformity | 7.19 % c |
| Refractive Index | 1.468 d |
| Stress Level | -145.71 MPascal e |
| Etch Rate (100:1 BOE) | 307.1 A/min f |
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a: All data is updated as the date indicated above b: An average value from 15 min deposition c: Film thickness variation across a 4” wafer, defined as (max-min)/average d: An average value across a 4” wafer e: Measured with optical stress measurement tool f: An average value from 20 min etch
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