Plasma Therm PECVD - Standard Nitride Recipe
| Equipment |
| | Equipment | Plasma-Therm PECVD |
| Manufacturer: | Plasma-Therm Inc. |
| Model | Wafer/Batch 790 Series |
| Platen Size | 8 in |
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| Recipe |
| Recipe Name: | STDNIT.prc |
| Gas | 2% Silane in Nitrogen 200 sccm |
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| Ammonia 5.0 sccm |
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| Nitrogen 900 sccm |
| Pressure | 900 mtorr |
| Temperature | 250°C |
| Power | 30 W |
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| Resultsa |
| Deposition Rate: | 140 Å/minb |
| Uniformity: | 0.64%c |
| Refractive Index at 633nm: | 1.8675d |
| Stress Level: | N/Ae |
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a: All data is updated as the date indicated above b: An average value from 15 min deposition c: Film thickness variation across a 4” wafer, defined as (max-min)/average d: An average value across a 4” wafer e: Measured with optical stress measurement tool |